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          首頁(yè) >VT1060C>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          VT1060C

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

          文件:130.58 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060C

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:173.74 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060C-E3

          Trench MOS Schottky technology

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

          文件:156.9 Kbytes 頁(yè)數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060C-E3

          Dual High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:202.1 Kbytes 頁(yè)數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060C-E3_V01

          Dual High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:202.1 Kbytes 頁(yè)數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060CHM3

          Trench MOS Schottky technology

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 T

          文件:133.87 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060CHM3-4W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

          文件:130.58 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060C-M3

          Trench MOS Schottky technology

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 T

          文件:133.87 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060C-M3-4W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

          文件:130.58 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060C_12

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:173.74 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號(hào):

            VT1060C

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          VISHAY
          25+
          TO-220
          3675
          就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
          詢價(jià)
          VISHAY
          23+
          TO-220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          Vishay Semiconductor Diodes Di
          22+
          TO220AB
          9000
          原廠渠道,現(xiàn)貨配單
          詢價(jià)
          VISHAY/威世
          23+
          TO-220-3
          11200
          原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
          詢價(jià)
          VISHAY
          /
          TO-220
          25
          一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價(jià)
          VISHAY
          23+
          TO-220
          2520
          原廠原裝正品
          詢價(jià)
          24+
          N/A
          70000
          一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
          詢價(jià)
          Vishay General Semiconductor -
          25+
          TO-220-3
          9350
          獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
          詢價(jià)
          VISHAY
          原廠封裝
          9800
          原裝進(jìn)口公司現(xiàn)貨假一賠百
          詢價(jià)
          Vishay
          26+
          SOT-89
          86720
          全新原裝進(jìn)口現(xiàn)貨價(jià)格優(yōu)惠 本公司承諾原裝正品假一賠
          詢價(jià)
          更多VT1060C供應(yīng)商 更新時(shí)間2021-9-14 10:50:00
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