首頁 >VSI080P06MS>規(guī)格書列表
| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
VSI080P06MS | P-Channel Mosfet ? P-Channel，-5V Logic level Control\n? Enhancement mode\n? Low on-resistance RDS(on) @ VGS=-4.5V \n? Fast Switching\n? 100% Avalanche Tested \n? Pb-free lead plating， RoHS compliant; | Vergiga 威兆半導(dǎo)體 | Vergiga | |
VSI080P06MS | N-Channel MOSFET uses advanced trench technology 文件：1.22227 Mbytes 頁數(shù)：4 Pages | DOINGTER 杜因特 | DOINGTER | |
P-Channel Enhancement Mode Power MOSFET Description The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：887.76 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
P-Channel Enhancement Mode Power MOSFET Description The G080P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：923.56 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD |
技術(shù)參數(shù)
- Type：
Single-P
- ESD：
NO
- Package：
TO-251
- BVDSS[V]：
-60
- VGS Max[V]：
20
- VTH Typ[V]：
-1.8
- RDS(ON) Max 10V：
80.0
- RDS(ON) Max 4.5V：
95.0
- ID(A)@25℃：
-15.0
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VANGUARD |
2022+ |
TO-251 |
50000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
VANGUARD |
25+ |
TO-251-S |
188600 |
全新原廠原裝正品現(xiàn)貨 歡迎咨詢 |
詢價(jià) | ||
VOLGEN |
25+ |
電源模塊 |
335 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
24+ |
N/A |
69000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
VANGUARD/威兆 |
24+ |
TO-251 |
100000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
VISHAY |
1708+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
SAMPO |
23+ |
DIP-40 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
SAMPO |
25+ |
DIP-40 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
NS |
24+ |
DIP-28 |
13 |
詢價(jià) | |||
NS/國半 |
23+ |
PLCC28 |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價(jià) |
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