| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
G080P06M | 絲印:G080P06;Package:TO-263;P-Channel Enhancement Mode Power MOSFET Description The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:887.76 Kbytes 頁數(shù):6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | |
G080P06M | -60V P Channel TRENCH MOSFET The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. | GOFORD 谷峰半導(dǎo)體 | GOFORD | |
P-Channel Enhancement Mode Power MOSFET Description The G080P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:923.56 Kbytes 頁數(shù):6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
N-Channel MOSFET uses advanced trench technology 文件:1.22227 Mbytes 頁數(shù):4 Pages | DOINGTER 杜因特 | DOINGTER |
技術(shù)參數(shù)
- Package:
TO-263
- Type:
P
- ESD Diode:
NO
- Vds(V):
-60
- Vgs(V):
±20
- Id(A):
-195
- Pd(W):
294
- Vgs(th)max(V):
-4
- Rds(on)mΩ(typ)@Vgs=10V:
6.2
- Rds(on)mΩ(max)@Vgs=10V:
7.5
- Qg(nC):
186
- Qgs(nC):
43
- Qgd(nC):
56
- Ciss(pF):
15870
- Crss(pF):
730
- Technology:
TRENCH
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
69000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
國產(chǎn) |
詢價 | ||
CMO |
24+ |
65200 |
詢價 | ||||
CHIMEI奇美 |
23+ |
800480 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
CMO |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
G |
24+ |
S |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
G |
23+ |
S |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
G |
25+ |
S |
2000 |
原裝正品,假一罰十! |
詢價 | ||
FERRAZ/羅蘭熔斷器 |
23+ |
標準封裝 |
5000 |
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保 |
詢價 | ||
ASTEC |
18+ |
SOT353 |
12500 |
全新原裝正品,本司專業(yè)配單,大單小單都配 |
詢價 |
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