OMNIFET fully autoprotected Power MOSFET

文件：595.92 Kbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導(dǎo)體

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

ST

意法半導(dǎo)體

OMNIFET：全自動保護功率MOSFET

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments ? ESD protection \n? Logic level input threshold \n? High noise immunity \n? Linear current limitation \n? Short circuit protection \n? Thermal shutdown \n? Low current drawn from input pin \n? Schmitt trigger on input \n? Integrated clamp;

ST

意法半導(dǎo)體

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

ST

意法半導(dǎo)體

Package：Pentawatt-5（水平，彎曲和錯列引線）；包裝：管件 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT

STMICROELECTRONICS

意法半導(dǎo)體

Package：Pentawatt-5（直引線，交錯配接深度）；包裝：管件 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT

STMICROELECTRONICS

意法半導(dǎo)體

Package：Pentawatt-5（水平，彎曲和錯列引線）；包裝：卷帶（TR） 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT

STMICROELECTRONICS

意法半導(dǎo)體