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首頁(yè) >VND10>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
VND10	文件：217.7 Kbytes Page：9 Pages	ISO HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr 文件：217.7 Kbytes 頁(yè)數(shù)：9 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10	文件：186.9 Kbytes Page：11 Pages	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr 文件：186.9 Kbytes 頁(yè)數(shù)：11 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10B	文件：186.9 Kbytes Page：11 Pages	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr 文件：186.9 Kbytes 頁(yè)數(shù)：11 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10B011Y	文件：186.9 Kbytes Page：11 Pages	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr 文件：186.9 Kbytes 頁(yè)數(shù)：11 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10B012Y	文件：186.9 Kbytes Page：11 Pages	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr 文件：186.9 Kbytes 頁(yè)數(shù)：11 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10BSP	文件：217.7 Kbytes Page：9 Pages	ISO HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr 文件：217.7 Kbytes 頁(yè)數(shù)：9 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10N06	文件：168.29 Kbytes Page：14 Pages	ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h 文件：168.29 Kbytes 頁(yè)數(shù)：14 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10N06-1	文件：168.29 Kbytes Page：14 Pages	ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h 文件：168.29 Kbytes 頁(yè)數(shù)：14 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10B	文件：213.38 Kbytes Page：13 Pages	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY 文件：213.38 Kbytes 頁(yè)數(shù)：13 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
VND10B	文件：222.98 Kbytes Page：13 Pages	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY 文件：222.98 Kbytes 頁(yè)數(shù)：13 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS

技術(shù)參數(shù)

Technology：
M0-2
RDS(on)_typ(mΩ)：
300
General Description：
OMNIFET
Marketing Status：
Active
Package：
DPAK
RoHS Compliance Grade：
Ecopack1
Clamp Voltage_typ(V)：
60
Drain Current Limit_typ(A)：
10

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市賽特興科技有限公司	VND10	ST	23+	原廠原封	16900	正規(guī)渠道,只有原裝!	詢價(jià)
深圳市外芯人半導(dǎo)體有限公司	VND10	ST	24+	NA	200000	原裝進(jìn)口正口,支持樣品	詢價(jià)
深圳瞄鈞科技有限公司	VND10	ST	24+	原廠原封	16900	支持樣品,原裝現(xiàn)貨,提供技術(shù)支持!	詢價(jià)
深圳市騰億芯科技有限公司	VND10	ST	25+	原廠原封	16900	原裝，請(qǐng)咨詢	詢價(jià)
深圳市盈慧通電子有限公司	VND10	ST	2511	原廠原封	16900	電子元器件采購(gòu)降本30%!原廠直采,砍掉中間差價(jià)	詢價(jià)
深圳市中飛凌科技有限公司	VND10	ST	26+	NA	60000	只有原裝可配單	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	VND10N06	ST	06+	?TO-251	1000	全新原裝絕對(duì)有貨	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	VND10B	ST	23+	SOP10	3600	絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!	詢價(jià)
深圳市益百分電子有限公司	VND10BSP	ST	SOP10	03+	3	全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)	詢價(jià)
深圳市勤思達(dá)科技有限公司	VND10BSP13TR	STM	10+	SOP-10	7800	全新原裝正品,現(xiàn)貨銷(xiāo)售	詢價(jià)

更多VND10供應(yīng)商更新時(shí)間2026-1-19 16:01:00

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