SMPS PRIMARY I.C.

DESCRIPTION VIPer100B/100BSP, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (400 V / 6 A). Typical applications cover off line power supplies with a secondary power

文件：173.13 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

SMPS PRIMARY I.C.

DESCRIPTION VIPer100B/100BSP, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (400 V / 6 A). Typical applications cover off line power supplies with a secondary power

文件：173.13 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

SMPS PRIMARY I.C.

ST

意法半導(dǎo)體

SMPS PRIMARY I.C.

Description VIPer100-E, made using VIPower M0 Technology, combines on the same silicon chip a state-of-theart PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (620V/ 3A). General Features ■ ADJUSTABLE SWITCHING FREQUENCY UP TO 200 kHz ■ CURRENT MODE CONTROL ■ SOFT S

文件：266.93 Kbytes 頁數(shù)：29 Pages

STMICROELECTRONICS

意法半導(dǎo)體

SMPS PRIMARY I.C.

DESCRIPTION VIPer100?/100A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 3A). ■ ADJUSTABLE SWITCHING FREQUENCY UP TO 200 kHz ■ CURRENT MODE CONTRO

文件：406.63 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

SMPS PRIMARY I.C.

DESCRIPTION VIPer100?/100A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 3A). ■ ADJUSTABLE SWITCHING FREQUENCY UP TO 200 kHz ■ CURRENT MODE CONTRO

文件：406.63 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體