SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

文件：179.96 Kbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導體

SMPS PRIMARY I.C.

Description VIPer20-E/DIP-E, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (620V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 10W

文件：319.84 Kbytes 頁數(shù)：31 Pages

STMICROELECTRONICS

意法半導體

SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

文件：179.96 Kbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導體

SMPS primary I.C.

Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of

文件：642.44 Kbytes 頁數(shù)：34 Pages

STMICROELECTRONICS

意法半導體

SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

文件：179.96 Kbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導體

SMPS primary I.C.

Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of

文件：642.44 Kbytes 頁數(shù)：34 Pages

STMICROELECTRONICS

意法半導體

SMPS primary I.C.

Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of

文件：642.44 Kbytes 頁數(shù)：34 Pages

STMICROELECTRONICS

意法半導體

SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

文件：179.96 Kbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導體

SMPS primary I.C.

Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of

文件：642.44 Kbytes 頁數(shù)：34 Pages

STMICROELECTRONICS

意法半導體

SMPS PRIMARY I.C.

DESCRIPTION VIPer20B? combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (400V 1.3A). Typical applications cover off line power supplies with a secondary max power capability of 30W. It is compatible fro

文件：151.49 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導體