Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：74.15 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：128.94 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：128.94 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：85.84 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：78.96 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

威世

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-220-3 全封裝，隔離接片；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 40A 45V ITO-220AB

Vishay General Semiconductor - Diodes Division