Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

文件：133.49 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件：138.8 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件：148.1 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

文件：146.27 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

文件：133.49 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-220-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 5A 200V ITO-220AB

Vishay General Semiconductor - Diodes Division