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          首頁 >VF40>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VF40

          Diffused Silicon Junction

          文件:91.33 Kbytes 頁數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          VF40100C

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max., 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA

          文件:135.36 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VF40100C_V01

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max., 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA

          文件:135.36 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VF40100C-E3

          Dual High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Low thermal resistance ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

          文件:1.12964 Mbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VF40100G

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C maximum, 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

          文件:130.15 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VF40100G_V01

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C maximum, 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

          文件:130.15 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VF40100G-E3

          Dual High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

          文件:217.27 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VF40120C

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

          文件:127.21 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VF40120C

          Powerpack MOS Schottky Barrier Rectifier

          Features · Trench Mos Schottky Barrier · Guardring for overvoltage Protection · Low Forward Voltage Drop · Low Reverse Leakage Current · High Surge Current Capability · Plastic Material has UL Flammability Classification 94V-O

          文件:538.18 Kbytes 頁數(shù):2 Pages

          DAESAN

          VF40120C_V01

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

          文件:127.21 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術(shù)參數(shù)

          • Product Type:

            Magnetoresistive digital ring magnet speed sensor IC

          • Package Type:

            Flat TO-92-style

          • Magnetic Actuation Type:

            Differential bridge

          供應(yīng)商型號品牌批號封裝庫存備注價格
          Honeywell
          13+
          23758
          原裝分銷
          詢價
          VISHAY
          25+
          ITO-220
          3000
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          VISHAY
          3000
          正品原裝--自家現(xiàn)貨-實單可談
          詢價
          Honeywell
          24+
          原廠原裝
          6000
          進(jìn)口原裝正品假一賠十,貨期7-10天
          詢價
          VISHAY
          17+
          TO-220F-3
          6200
          詢價
          VE
          24+
          DIP40
          2
          詢價
          VISHAY
          24+
          TO-220F
          5000
          只做原裝公司現(xiàn)貨
          詢價
          Vishay
          24+
          NA
          3000
          進(jìn)口原裝正品優(yōu)勢供應(yīng)
          詢價
          Honeywell
          5
          全新原裝 貨期兩周
          詢價
          VISHAY
          23+
          TO-220
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          更多VF40供應(yīng)商 更新時間2026-1-20 9:01:00
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