| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
VF20200C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath te 文件:166.57 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
VF20200C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:160.99 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
VF20200C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:147.86 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
VF20200C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:157.42 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件:214.84 Kbytes 頁(yè)數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Schottky technology Ultra Low VF = 0.60 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath te 文件:155.83 Kbytes 頁(yè)數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath te 文件:166.57 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath te 文件:166.57 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:160.99 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | Vishay 威世 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
VF20200C
- 制造商:
VISHAY
- 制造商全稱:
Vishay Siliconix
- 功能描述:
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
Vishay(威世) |
2021/2022+ |
標(biāo)準(zhǔn)封裝 |
6500 |
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品 |
詢價(jià) | ||
VISHAY/威世 |
24+ |
TO-220F |
60000 |
詢價(jià) | |||
Vishay(威世) |
24+ |
N/A |
11800 |
可配單提供樣品 |
詢價(jià) | ||
Vishay(威世) |
25+ |
N/A |
8800 |
公司只做原裝,詳情請(qǐng)咨詢 |
詢價(jià) | ||
Vishay(威世) |
2511 |
N/A |
11800 |
電子元器件采購(gòu)降本 30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
VISHAY |
24+ |
TO220F |
8000 |
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增 |
詢價(jià) | ||
VISHAY |
原廠封裝 |
9800 |
原裝進(jìn)口公司現(xiàn)貨假一賠百 |
詢價(jià) | |||
Vishay(威世) |
23+ |
N/A |
11800 |
詢價(jià) |
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