2-Wire Solid State Switch

文件：616.79 Kbytes 頁數(shù)：5 Pages

HONEYWELL

霍尼韋爾

兩線制 MR 環(huán)形磁微距傳感器集成電路。扁平 TO-92 樣式封裝。增強(qiáng)靈敏度，典型值為 ±7 G。數(shù)字拉電流輸出

VF401 是一款高性能的數(shù)字式雙線 MR（磁阻）傳感器，采用小型扁平式的 TO-92 塑料封裝，帶有電流輸出端口，專為細(xì)間距環(huán)形磁鐵的感測而設(shè)計(jì)。\n 獨(dú)特的 VF401 橋布局（專利號 6297628 ）經(jīng)過優(yōu)化，允許目標(biāo)和傳感器之間存在較大氣隙，減小傳感器信號或精度的損失。\n VF401 對跑偏（傳感器位置相對于環(huán)形磁鐵內(nèi)徑或外徑的漂移）的靈敏度降低。而且它對傾斜誤差（與信號元件和環(huán)形磁鐵平行位置的偏差）的敏感度也降低，允許誤差高達(dá) 10°。而典型的環(huán)形磁鐵傳感器僅為 2°至 3°，并且受扭轉(zhuǎn)（電橋槽相對于磁極轉(zhuǎn)換與理想角度位置的偏差）的影響更小。 ·Robust design operating from -40 °C to 150 °C [-40 °F to 302 °F] can withstand short durations up to 175 °C [347 °F], allowing use in potential applications with extreme temperature requirements.\n·Not damaged by reverse polarity voltages when customer-supplied sense resistor is installed, enhancin;

Honeywell

霍尼韋爾

Package：徑向；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 功能：專用型 類別：傳感器，變送器 磁性傳感器 - 開關(guān)（固態(tài)） 描述：MAGNETIC SWITCH SPEC PURP RADIAL

Honeywell Sensing and Productivity Solutions

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max., 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA

文件：135.36 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max., 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA

文件：135.36 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Low thermal resistance ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：1.12964 Mbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C maximum, 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

文件：130.15 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C maximum, 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

文件：130.15 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：217.27 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Powerpack MOS Schottky Barrier Rectifier

Features · Trench Mos Schottky Barrier · Guardring for overvoltage Protection · Low Forward Voltage Drop · Low Reverse Leakage Current · High Surge Current Capability · Plastic Material has UL Flammability Classification 94V-O

文件：538.18 Kbytes 頁數(shù)：2 Pages

DAESAN