| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The VBA1310S uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. Features 文件：686.44 Kbytes 頁數：7 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The VBA1310S uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. Feat 文件：636 Kbytes 頁數：7 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch 文件：625 Kbytes 頁數：9 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch 文件：625 Kbytes 頁數：9 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Notebook Load Switch ? Low Current dc-to-dc 文件：642.61 Kbytes 頁數：9 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Notebook Load Switch ? Low Current dc-to-dc 文件：642.61 Kbytes 頁數：9 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 40-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? POL ? Synchronous Rectification 文件：516.83 Kbytes 頁數：7 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 40-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch 文件：485.03 Kbytes 頁數：9 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 40-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch 文件：485.03 Kbytes 頁數：9 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 40-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch 文件：628.87 Kbytes 頁數：9 Pages | VBSEMI 微碧半導體 | VBSEMI |
技術參數
- 頻率-最大值：
4GHz
- 阻抗：
50Ω
- 工作溫度范圍：
-55℃~+85℃
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
DIP-14 |
251 |
詢價 | |||
ATCDiversifiedElectronic |
新 |
6 |
全新原裝 貨期兩周 |
詢價 | |||
ATC Diversified Electronics |
2022+ |
2 |
全新原裝 貨期兩周 |
詢價 | |||
24651 |
詢價 | ||||||
VBsemi(臺灣微碧) |
2447 |
SO-8 |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨 |
詢價 | ||
CINCH |
25+ |
連接器 |
963 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
VBSEMI/臺灣微碧 |
24+ |
SOT-23 |
9600 |
原裝現貨,優(yōu)勢供應,支持實單! |
詢價 | ||
Cinch |
22+ |
NA |
817 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
HONEYWELL |
23+ |
11200 |
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | |||
TI/德州儀器 |
25+ |
SOT-23 |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 |
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