N-Channel 200-V (D-S) MOSFET

Key Features: ?Low rDS(on) trench technology ?Low thermal impedance ?Fast switching speed Typical Applications: ?White LED boost converters ?Automotive Systems ?Industrial DC/DC Conversion Circuits

文件：754.37 Kbytes 頁數(shù)：6 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Gen II ? Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology APPLICATIONS ? Synchronous Buck Low-Side - Notebook - Server - Workstation ? Synchronous Rectifier-POL

文件：398.13 Kbytes 頁數(shù)：8 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Gen II ? Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology APPLICATIONS ? Synchronous Buck Low-Side - Notebook - Server - Workstation ? Synchronous Rectifier-POL

文件：398.13 Kbytes 頁數(shù)：8 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：613.02 Kbytes 頁數(shù)：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：613.02 Kbytes 頁數(shù)：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：613.44 Kbytes 頁數(shù)：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：602.75 Kbytes 頁數(shù)：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：606.24 Kbytes 頁數(shù)：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：709.92 Kbytes 頁數(shù)：9 Pages

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N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The VBA1310S uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. Feat

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