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                >VB30>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          VB30100SG-E3
          High efficiency operation
          
FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Low thermal resistance

? Solder dip 275 °C max. 10 s, per JESD 22-B106

? AEC-Q101 qualified

? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2
          文件：161.5 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB30100SG-E3
          High Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Low thermal resistance
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 
          文件：220.63 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB30100SG-E3/4W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
          
FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Low thermal resistance

? Solder dip 275 °C max. 10 s, per JESD 22-B106

? AEC-Q101 qualified

? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2
          文件：168.82 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB30100SG-E3/8W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
          
FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Low thermal resistance

? Solder dip 275 °C max. 10 s, per JESD 22-B106

? AEC-Q101 qualified

? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2
          文件：168.82 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB30100SG-E3SLASH4W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
          
FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Low thermal resistance

? Solder dip 275 °C max. 10 s, per JESD 22-B106

? AEC-Q101 qualified

? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2
          文件：168.82 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB30100SG-E3SLASH8W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
          
FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Low thermal resistance

? Solder dip 275 °C max. 10 s, per JESD 22-B106

? AEC-Q101 qualified

? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2
          文件：168.82 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB30100SG-M3
          High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Low thermal resistance
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?9
          文件：103.08 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB30100SG-M3_V01
          High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Low thermal resistance
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?9
          文件：103.08 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB30100S-M3
          Schotty Barrier Diode
          
FEATURES
· Low Forward Voltage Drop, Low Power losses
· High Efficiency Operation
· SMD
APPLICATIONS
· Switching Power Supply (SPS)
· High Frequency Converter
· DC/DC Converter
          文件：321.04 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          VB30100S-M3
          High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Low thermal resistance
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?9
          文件：89.54 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Peak Reverse Repetitive Voltage：
            100V
          • Peak Reverse Current：
            1000uA
          • Peak Non-Repetitive Surge Current：
            250A
          • Peak Forward Voltage：
            0.91V
          • Operating Junction Temperature：
            -40 to 150°C
          • Minimum Operating Temperature：
            -40°C
          • Maximum Operating Temperature：
            150°C
          • Maximum Continuous Forward Current：
            30A
          • Configuration：
            Single
          
            
          
        
          
            
          供應商型號品牌批號封裝庫存備注價格
          
                
          



          Vishay/GeneralSemiconduc
          		

          24+
          		

          TO-263
          		

          7500
          		

          		
詢價
          

          



          VISHAY
          		

          17+
          		

          TO263
          		

          6200
          		

          100%原裝正品現(xiàn)貨
          		
詢價
          

          



          ANY
          		

          新
          		

          		

          12
          		

          全新原裝 貨期兩周
          		
詢價
          

          



          VISHAY
          		

          25+23+
          		

          TO-263
          		

          16601
          		

          絕對原裝正品全新進口深圳現(xiàn)貨
          		
詢價
          

          



          VISHAY
          		

          18+
          		

          TO-263
          		

          85600
          		

          保證進口原裝可開17%增值稅發(fā)票
          		
詢價
          

          



          		

          24+
          		

          TO-263
          		

          20000
          		

          全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅??！
          		
詢價
          

          



          VISHAY/威世
          		

          20+
          		

          D2PAK
          		

          69052
          		

          原裝優(yōu)勢主營型號-可開原型號增稅票
          		
詢價
          

          



          VISHAY
          		

          20+
          		

          TO263
          		

          11520
          		

          特價全新原裝公司現(xiàn)貨
          		
詢價
          

          



          General Semiconductor / Vishay
          		

          2022+
          		

          		

          1183
          		

          全新原裝 貨期兩周
          		
詢價
          

          



          VISHAY/威世
          		

          25+
          		

          TO263
          		

          18000
          		

          全新原裝現(xiàn)貨,假一賠十
          		
詢價
          

            
          
        
          
        
          更多VB30供應商
            更新時間2026-1-19 10:20:00
        
          
        
          
          
          
            
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