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          首頁 >V35>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          V35PW15_V01

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available? -

          文件:145.62 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PW22HM3SLASHI

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A

          ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive

          文件:134.31 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PW22-M3SLASHI

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A

          ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive

          文件:134.31 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PW45

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A

          文件:132.89 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PW45_V01

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A

          文件:132.89 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PW60

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A

          文件:134.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PW60_V01

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A

          文件:134.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PW60HM3SLASHI

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5 A

          ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive

          文件:133.63 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PW60-M3SLASHI

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5 A

          ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive

          文件:133.63 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V35PWM10

          High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available? -

          文件:121.29 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          供應(yīng)商型號品牌批號封裝庫存備注價格
          VISHAY
          25+
          TO-252
          3675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          24+
          N/A
          47000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          Vishay General Semiconductor -
          25+
          SlimDPAK
          9350
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          Vishay
          24+
          NA
          3688
          進口原裝正品優(yōu)勢供應(yīng)
          詢價
          Vishay
          2022+
          原廠原包裝
          6800
          全新原裝 支持表配單 中國著名電子元器件獨立分銷
          詢價
          60000
          全新、原裝
          詢價
          更多V35供應(yīng)商 更新時間2021-9-14 10:50:00
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