High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

文件：122.6 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 5 A

分立 Very low profile - typical height of 1.3 mm\nTrench MOS Schottky technology\nIdeal for automated placement;

Vishay

威世

High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available? -

文件：145.62 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：管件管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 150V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 150V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division