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    首頁(yè) >UPD5702TU>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    UPD5702TU

    NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

    3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

    文件:176.33 Kbytes 頁(yè)數(shù):4 Pages

    CEL

    UPD5702TU

    Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

    FEATURES ? Output Power : Pout = +21 dBm MIN. @Pin = ?5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V ? Single Supply voltage : VDS = 3.0 V TYP. ? Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

    文件:231.97 Kbytes 頁(yè)數(shù):13 Pages

    RENESAS

    瑞薩

    UPD5702TU-A

    Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

    3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

    文件:391.25 Kbytes 頁(yè)數(shù):10 Pages

    CEL

    UPD5702TU-E2

    絲?。?a target="_blank" title="Marking" href="/5702/marking.html">5702;Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

    FEATURES ? Output Power : Pout = +21 dBm MIN. @Pin = ?5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V ? Single Supply voltage : VDS = 3.0 V TYP. ? Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

    文件:231.97 Kbytes 頁(yè)數(shù):13 Pages

    RENESAS

    瑞薩

    UPD5702TU-E2-A

    Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

    3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

    文件:391.25 Kbytes 頁(yè)數(shù):10 Pages

    CEL

    UPD5702TU-E2-A

    NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

    3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

    文件:176.33 Kbytes 頁(yè)數(shù):4 Pages

    CEL

    UPD5702TU-A

    Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

    3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT\nFOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONSDESCRIPTION\nThe μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. T ? Output Power : Pout = +21 dBm MIN. @Pin = ?5 dBm, f = 1.9 GHz, VDS = 3.0 V\n: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V\n? Single Supply voltage : VDS = 3.0 V TYP.\n? Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.;

    CEL

    UPD5702TU-E2-A

    Package:8-SMD,扁平引線裸焊盤;包裝:散裝 類別:RF/IF,射頻/中頻和 RFID 射頻放大器 描述:IC AMP 802.15.1 2.4GHZ 8MINIMOLD

    CEL

    UPD5702TU-EV09

    包裝:散裝 類別:開發(fā)板,套件,編程器 射頻評(píng)估和開發(fā)套件,開發(fā)板 描述:EVAL BOARD UPD5702TU 900MHZ

    CEL

    UPD5702TU-EV24

    包裝:盒 類別:開發(fā)板,套件,編程器 射頻評(píng)估和開發(fā)套件,開發(fā)板 描述:EVAL BOARD UPD5702TU 2.4GHZ

    CEL

    詳細(xì)參數(shù)

    • 型號(hào):

      UPD5702TU

    • 功能描述:

      射頻放大器 RO 551-UPD5702TU-A

    • RoHS:

    • 制造商:

      Skyworks Solutions, Inc.

    • 類型:

      Low Noise Amplifier

    • 工作頻率:

      2.3 GHz to 2.8 GHz

    • P1dB:

      18.5 dBm

    • 輸出截獲點(diǎn):

      37.5 dBm

    • 功率增益類型:

      32 dB

    • 噪聲系數(shù):

      0.85 dB

    • 工作電源電壓:

      5 V

    • 電源電流:

      125 mA

    • 測(cè)試頻率:

      2.6 GHz

    • 最大工作溫度:

      + 85 C

    • 安裝風(fēng)格:

      SMD/SMT

    • 封裝/箱體:

      QFN-16

    • 封裝:

      Reel

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    NEC
    24+
    SOP-8
    118901
    新進(jìn)庫(kù)存/原裝
    詢價(jià)
    NEC
    18+
    SOT-8
    85600
    保證進(jìn)口原裝可開17%增值稅發(fā)票
    詢價(jià)
    NEC
    20+
    SOP-8
    2960
    誠(chéng)信交易大量庫(kù)存現(xiàn)貨
    詢價(jià)
    CEL
    20+
    8-SMD
    5000
    無(wú)線通信IC,大量現(xiàn)貨!
    詢價(jià)
    CEL
    25+
    射頻元件
    3000
    就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
    詢價(jià)
    NEC
    23+
    SOT-8
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢價(jià)
    CEL
    22+
    8MINIMOLD
    9000
    原廠渠道,現(xiàn)貨配單
    詢價(jià)
    NEC
    25+
    SOT-8
    4500
    全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售!
    詢價(jià)
    CYPRESS/賽普拉斯
    23+
    NA
    11200
    原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
    詢價(jià)
    NEC
    2023+
    SOT-8
    5800
    進(jìn)口原裝,現(xiàn)貨熱賣
    詢價(jià)
    更多UPD5702TU供應(yīng)商 更新時(shí)間2026-1-23 10:21:00

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