NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

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Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

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CEL

Package：8-SMD，扁平引線裸焊盤；包裝：散裝 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP 802.15.1 2.4GHZ 8MINIMOLD

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Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES ? Output Power : Pout = +21 dBm MIN. @Pin = ?5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V ? Single Supply voltage : VDS = 3.0 V TYP. ? Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

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