VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8119T and μPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

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NEC

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-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8130TA and μPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional μPC8119T

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NEC

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VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8119T and μPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 頁數(shù)：52 Pages

NEC

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絲?。?a target="_blank" title="Marking" href="/c2m/marking.html">C2M；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Recommended operating frequency : f = 100 MHz to 1.92 GHz ? Supply voltage : VCC = 2.7 to 3.3 V ? Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V ? Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) ? Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

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RENESAS

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J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER

DESCRIPTION The μPC811 operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor (fr-300 MHz) in the output stage solves the oscillation problem of current sink- ing with a large capa

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NEC

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High Stability, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES ? Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.) ? VIO Temperature Drift ±7 μV/?C (TYP.) ? Input Bias Current 50 pA (TYP.) ? Slew Rate 15 V/μs (TYP.) ? Unity Gain Frequency 4 MHz (TYP.) ? Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz) ? Stable operation again

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RENESAS

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1 GHz QUADRATURE MODULATOR

文件：75.38 Kbytes 頁數(shù)：6 Pages

NEC

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1 GHz QUADRATURE MODULATOR

文件：75.38 Kbytes 頁數(shù)：6 Pages

NEC

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1 GHz QUADRATURE MODULATOR

文件：75.38 Kbytes 頁數(shù)：6 Pages

NEC

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3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER

文件：173.17 Kbytes 頁數(shù)：5 Pages

CEL