1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The μPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

文件：248.64 Kbytes 頁數(shù)：28 Pages

NEC

瑞薩

1 GHz QUADRATURE MODULATOR

DESCRIPTION The μPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

文件：42.3 Kbytes 頁數(shù)：4 Pages

NEC

瑞薩

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION The μPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The μPC8112TB features high impedance output of open collector. Similar ICs of the μPC2757TB

文件：125.76 Kbytes 頁數(shù)：5 Pages

NEC

瑞薩

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION The μPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The μPC8112TB features high impedance output of open collector. Similar ICs of the μPC2757TB

文件：125.76 Kbytes 頁數(shù)：5 Pages

NEC

瑞薩

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference) IM3 = –88 dBm@PRFin = –38 dBm, 1.9 GHz (reference) ? Similar conversion gain to mPC2757 and lower noise figure than mPC2758 ? Minimized carrier leakage : RFLO = –80 dB@fRFin = 900 MHz (reference) RFLO = –55 dB@fRF

文件：273.59 Kbytes 頁數(shù)：22 Pages

RENESAS

瑞薩

絲印：C2K；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference) IM3 = –88 dBm@PRFin = –38 dBm, 1.9 GHz (reference) ? Similar conversion gain to mPC2757 and lower noise figure than mPC2758 ? Minimized carrier leakage : RFLO = –80 dB@fRFin = 900 MHz (reference) RFLO = –55 dB@fRF

文件：273.59 Kbytes 頁數(shù)：22 Pages

RENESAS

瑞薩

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION The μPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The μPC8112TB features high impedance output of open collector. Similar ICs of the μPC2757TB

文件：125.76 Kbytes 頁數(shù)：5 Pages

NEC

瑞薩

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Supply voltage : VCC = 2.7 to 5.5 V ? Low current consumption : ICC = 4.1 mA TYP.@VCC = VPS = 3.0 V ? Wideband response : fRF = 100 to 500 MHz ? Power save function : ICCPS = 1 mA MAX. @VCC = 3.0 V, PS = 0 V ? High-density surface mounting : 20-pin plastic SSOP (6.7 ′ 4.4 ′ 1.5 mm)

文件：276.06 Kbytes 頁數(shù)：18 Pages

RENESAS

瑞薩

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Supply voltage : VCC = 2.7 to 5.5 V ? Low current consumption : ICC = 4.1 mA TYP.@VCC = VPS = 3.0 V ? Wideband response : fRF = 100 to 500 MHz ? Power save function : ICCPS = 1 mA MAX. @VCC = 3.0 V, PS = 0 V ? High-density surface mounting : 20-pin plastic SSOP (6.7 ′ 4.4 ′ 1.5 mm)

文件：276.06 Kbytes 頁數(shù)：18 Pages

RENESAS

瑞薩

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Recommended operating frequency : f = 100 MHz to 1.92 GHz ? Supply voltage : VCC = 2.7 to 3.3 V ? Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V ? Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) ? Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

文件：663.95 Kbytes 頁數(shù)：52 Pages

RENESAS

瑞薩