3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The μPC2762TB, μPC2763TB and μPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system. These IC is manufactured using NEC’s 20 GHz fT N

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NEC

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絲印：C1Z；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Supply voltage : VCC = 2.7 to 3.3 V ? Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz ? Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

文件：395.2 Kbytes 頁數：30 Pages

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3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless teleph

文件：144.32 Kbytes 頁數：6 Pages

NEC

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絲?。?a target="_blank" title="Marking" href="/c2a/marking.html">C2A；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Supply voltage : VCC = 2.7 to 3.3 V ? Circuit current : ICC = 30 mA TYP. @ VCC = 3.0 V ? Medium output power : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz ? Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.

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絲印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Supply voltage : VCC = 2.7 to 3.3 V ? Circuit current : ICC = 23.0 mA TYP. @ VCC = 3.0 V ? Medium output power : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz ? Power gain : GP = 19.0 dB TYP. @ f = 0.9 GHz GP = 2

文件：332.18 Kbytes 頁數：18 Pages

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絲?。?a target="_blank" title="Marking" href="/c2a/marking.html">C2A；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Supply voltage : VCC = 2.7 to 3.3 V ? Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz ? Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

文件：395.2 Kbytes 頁數：30 Pages

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3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The μPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES ? Supply voltage: VCC = 2.7 to 3.3 V ? Circuit current: ICC = 3

文件：404.53 Kbytes 頁數：16 Pages

NEC

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3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless teleph

文件：144.32 Kbytes 頁數：6 Pages

NEC

瑞薩

絲?。?a target="_blank" title="Marking" href="/c2a/marking.html">C2A；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Supply voltage : VCC = 2.7 to 3.3 V ? Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz ? Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

文件：395.2 Kbytes 頁數：30 Pages

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絲印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Supply voltage : VCC = 2.7 to 3.3 V ? Circuit current : ICC = 23.0 mA TYP. @ VCC = 3.0 V ? Medium output power : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz ? Power gain : GP = 19.0 dB TYP. @ f = 0.9 GHz GP = 2

文件：332.18 Kbytes 頁數：18 Pages

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