3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The μPC2762TB, μPC2763TB and μPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system. These IC is manufactured using NEC’s 20 GHz fT N

文件：171.89 Kbytes 頁數：28 Pages

NEC

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絲?。?a target="_blank" title="Marking" href="/c1z/marking.html">C1Z；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Supply voltage : VCC = 2.7 to 3.3 V ? Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz ? Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

文件：395.2 Kbytes 頁數：30 Pages

RENESAS

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3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：240.2 Kbytes 頁數：28 Pages

NEC

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3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION\nThe μPC2762TB, μPC2763TB and μPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system.\nThese IC is manufactured using NEC’s 20 GHz fT NES ? Supply voltage : VCC = 2.7 to 3.3 V\n? Medium output power :\n?? μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz\n?? μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz\n?? μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz\n? Power gain :\n?? μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz\n?? μPC2763TB;

Renesas

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Package：6-TSSOP，SC-88，SOT-363；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP CELL 2.7GHZ-2.9GHZ SOT363

CEL

3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER

文件：181.09 Kbytes 頁數：7 Pages

CEL

Package：6-TSSOP，SC-88，SOT-363；包裝：卷帶（TR） 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP CELL 2.7GHZ-2.9GHZ SOT363

CEL