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          首頁 >UPC16>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          UPC1678

          5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

          DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

          文件:94.35 Kbytes 頁數(shù):16 Pages

          NEC

          瑞薩

          UPC1678

          2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

          SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

          文件:126.21 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          UPC1678G

          5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

          DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

          文件:94.35 Kbytes 頁數(shù):16 Pages

          NEC

          瑞薩

          UPC1678G-E1

          2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

          SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

          文件:126.21 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          UPC1678G-E1

          5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

          DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

          文件:94.35 Kbytes 頁數(shù):16 Pages

          NEC

          瑞薩

          UPC1678G-E2

          5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

          DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

          文件:94.35 Kbytes 頁數(shù):16 Pages

          NEC

          瑞薩

          UPC1678GV

          5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

          DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

          文件:94.35 Kbytes 頁數(shù):16 Pages

          NEC

          瑞薩

          UPC1678GV

          BIPOLAR ANALOG INTEGRATED CIRCUIT

          FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

          文件:461.82 Kbytes 頁數(shù):18 Pages

          RENESAS

          瑞薩

          UPC1678GV-E1

          絲?。?a target="_blank" title="Marking" href="/1678/marking.html">1678;Package:SSOP;BIPOLAR ANALOG INTEGRATED CIRCUIT

          FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

          文件:461.82 Kbytes 頁數(shù):18 Pages

          RENESAS

          瑞薩

          UPC1678GV-E1

          2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

          SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

          文件:126.21 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          NEC
          25+
          SOP
          10000
          原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
          詢價(jià)
          NEC
          2025+
          SOP
          3565
          全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
          詢價(jià)
          NEC
          24+
          SOP8
          5054
          詢價(jià)
          NEC
          25+
          SOP8
          4950
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價(jià)
          NEC
          16+
          NA
          8800
          原裝現(xiàn)貨,貨真價(jià)優(yōu)
          詢價(jià)
          NEC
          2022+
          2020
          全新原裝 貨期兩周
          詢價(jià)
          NEC
          23+
          SOP8
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          NEC
          00+
          SOP8
          1901
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價(jià)
          NEC
          23+
          SOP8
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          詢價(jià)
          NEC
          2023+
          SOP8
          8800
          正品渠道現(xiàn)貨 終端可提供BOM表配單。
          詢價(jià)
          更多UPC16供應(yīng)商 更新時(shí)間2026-1-20 10:10:00
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