5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 頁(yè)數(shù)：16 Pages

NEC

瑞薩

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：126.21 Kbytes 頁(yè)數(shù)：6 Pages

NEC

瑞薩

5 V-BIAS, +17.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION\nThe μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is ? Supply voltage : VCC = 4.5 to 5.5 V\n? Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor\n? Wideband response : fu = 2.0 GHz TYP. @ 3 dB bandwidth\n? Power gain : GP = 23 dB TYP. @ f = 500 MHz\n? Isolation : ISL = 35 dB TYP. @ f = 500 MHz;

Renesas

瑞薩

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 頁(yè)數(shù)：16 Pages

NEC

瑞薩

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：126.21 Kbytes 頁(yè)數(shù)：6 Pages

NEC

瑞薩

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 頁(yè)數(shù)：16 Pages

NEC

瑞薩

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 頁(yè)數(shù)：16 Pages

NEC

瑞薩

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The μPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 頁(yè)數(shù)：16 Pages

NEC

瑞薩

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

文件：461.82 Kbytes 頁(yè)數(shù)：18 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/1678/marking.html">1678；Package：SSOP；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

文件：461.82 Kbytes 頁(yè)數(shù)：18 Pages

RENESAS

瑞薩