絲?。?strong>U33；Package：DFN2010P8；Transient Voltage Suppressors for ESD Protection

Features 200 Watts Peak Pulse Power per Line (tp=8/20μs) Protects Two Bidirectional I/O Lines Low Clamping Voltage Ultra-small Package Requires Less Than 2.0x1.0mm of PCB area IEC61000-4-2(ESD):±30kV (air discharge) ±30kV (contact discharge); IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (

文件：2.78793 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導體

絲?。?strong>U33；Package：SOT-25；4V Drive PchSBD MOSFET

文件：89.61 Kbytes 頁數(shù)：5 Pages

ROHM

羅姆

絲印：U33；Package：SOT-25；4V Drive Pch SBD MOSFET

文件：70.44 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

絲?。?strong>U33；Package：DFN2010T8；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

文件：2.75762 Mbytes 頁數(shù)：7 Pages

LEIDITECH

雷卯電子

絲?。?strong>U33；Package：DFN2010；LIGHTNING AND ESD PROTECTION FOR GIGABIT ETHRNET INTERFACE

文件：935.06 Kbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲印：U33；Package：DFN2010T8；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

文件：2.56955 Mbytes 頁數(shù)：7 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/u330a/marking.html">U330A；Package：SOIC；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features ? Universal: dual low-side, dual high-side or halfbridge driver ? Junction temperature range –40 to +150°C ? Up to 4A peak source and 6A peak sink output ? Common-mode transient immunity (CMTI) greater than 125V/ns ? Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio

文件：1.81206 Mbytes 頁數(shù)：47 Pages

TI

德州儀器

絲印：U330AQ；Package：SOIC；UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features ? Universal: dual low-side, dual high-side or halfbridge driver ? AEC-Q100 qualified with the following results – Device temperature grade 1 ? Junction temperature range –40 to +150°C ? Up to 4A peak source and 6A peak sink output ? Common-mode transient immunity (CMTI) greater

文件：1.81427 Mbytes 頁數(shù)：47 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/u330b/marking.html">U330B；Package：SOIC；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features ? Universal: dual low-side, dual high-side or halfbridge driver ? Junction temperature range –40 to +150°C ? Up to 4A peak source and 6A peak sink output ? Common-mode transient immunity (CMTI) greater than 125V/ns ? Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio

文件：1.81206 Mbytes 頁數(shù)：47 Pages

TI

德州儀器

絲印：U330B；Package：SOIC；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features ? Universal: dual low-side, dual high-side or halfbridge driver ? Junction temperature range –40 to +150°C ? Up to 4A peak source and 6A peak sink output ? Common-mode transient immunity (CMTI) greater than 125V/ns ? Up to 25V VDD output drive supply – 8V VDD UVLO options ? Swi

文件：1.82951 Mbytes 頁數(shù)：45 Pages

TI

德州儀器