絲?。?strong>U330B；Package：SOIC；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features ? Universal: dual low-side, dual high-side or halfbridge driver ? Junction temperature range –40 to +150°C ? Up to 4A peak source and 6A peak sink output ? Common-mode transient immunity (CMTI) greater than 125V/ns ? Up to 25V VDD output drive supply – 8V VDD UVLO options ? Swi

文件：1.82951 Mbytes 頁(yè)數(shù)：45 Pages

TI

德州儀器

絲印：U330B；Package：SOIC；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features ? Universal: dual low-side, dual high-side or halfbridge driver ? Junction temperature range –40 to +150°C ? Up to 4A peak source and 6A peak sink output ? Common-mode transient immunity (CMTI) greater than 125V/ns ? Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio

文件：1.81206 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

絲印：U330BQ；Package：SOIC；UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features ? Universal: dual low-side, dual high-side or halfbridge driver ? AEC-Q100 qualified with the following results – Device temperature grade 1 ? Junction temperature range –40 to +150°C ? Up to 4A peak source and 6A peak sink output ? Common-mode transient immunity (CMTI) greater

文件：1.81427 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/u330bq/marking.html">U330BQ；Package：SOIC；UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features ? Universal: dual low-side, dual high-side or halfbridge driver ? AEC-Q100 qualified with the following results – Device temperature grade 1 – Device HBM ESD classification level H2 – Device CDM ESD classification level C4B ? Junction temperature range –40 to +150°C ? Up to 4A p

文件：1.83126 Mbytes 頁(yè)數(shù)：45 Pages

TI

德州儀器