絲印：TW1；Package：SOT23；Schottky Barrier Diode Silicon Epitaxial

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絲?。?a target="_blank" title="Marking" href="/tw123v65c/marking.html">TW123V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 123 mΩ (typ.) (5) Less susceptible t

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絲?。?a target="_blank" title="Marking" href="/tw123v65c/marking.html">TW123V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 123 mΩ (typ.) (5) Less susceptible t

文件：799.11 Kbytes 頁數(shù)：12 Pages

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絲印：W107Z65C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 mΩ (typ.) (5) Less susceptible t

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絲?。?a target="_blank" title="Marking" href="/w140z120c/marking.html">W140Z120C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 140 mΩ (typ.) (5) Less susceptible

文件：631.9 Kbytes 頁數(shù)：12 Pages

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東芝

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m ? (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 頁數(shù)：10 Pages

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東芝

SiC N-Channel MOSFET

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 145mΩ(Max)@VGS= 18V · Low On-Resistance APPLICATIONS · DC-DC Converters · Solar Inverters, UPS · Motor Drives

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ISC

無錫固電

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m ? (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 頁數(shù)：10 Pages

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400-2700 MHz Linear Power Amplifier

Applications ? UHF television ? TETRA radios ? PCS, DCS, 2.5G, 3G handsets ? ISM band transmitters ? WCS fixed wireless ? 802.16 WiMAX ? 3GPP LTE Features ? Wideband frequency range: 400 to 2700 MHz ? Low Noise Figure: as low as 3.6 dB ? High linearity: OIP3 up to +42.5 dBm ? OP1dB =

文件：1.22711 Mbytes 頁數(shù)：14 Pages

SKYWORKS

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100 – 1000 MHz; Ultra Wideband Variable Gain Amplifier

Description Skyworks SKY65142 is an ultra-wideband Variable Gain Amplifier (VGA) in a small footprint module. The module contains a Variable Voltage Attenuator with Gain control range of over 20 dB. The device is internally matched for 50 Ohms on all RF ports. The VGA maintains very linear perfo

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SKYWORKS

思佳訊