單路 P 溝道增強-模式 MOSFET

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side swi ? Low rDS(on) . . . 0.18 Typ at VGS = -10 V\n? Requires No External VCC\n? VGS(th) = -1.5 V Max\n? ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015\n LinBICMOS is a trademark of Texas Instruments Incorporated;

TI

德州儀器

單路 P 溝道增強-模式 MOSFET

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1101 is the ? Low rDS(on) . . . 0.09 Typ at VGS = -10 V\n? Requires No External VCC\n? VGS(th) = -1.5 V Max\n? ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015;

TI

德州儀器

包裝：散裝 類別：光電器件 LED 指示 - 分立 描述：LED INDICATION SMD

Stanley Electric Co

包裝：散裝 類別：光電器件 LED 指示 - 分立 描述：LED INDICATION SMD

Stanley Electric Co

包裝：散裝 類別：光電器件 LED 指示 - 分立 描述：LED INDICATION SMD

Stanley Electric Co