TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)

Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs ● Low drain?source ON resistance : P Channel RDS (ON) = 27 m? (typ.) N Channel RDS (ON) = 14 m? (typ.) ● High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| =

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TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)

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TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ??/ ?-MOS ??

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Motor Dreive Notebook PC Portable Machines and Tools

○ Switching Regulator Applications ○ Load Switch Applications ? Lead(Pb)-Free ? Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive ? Small footprint due to small and thin package ? Low drain-source ON resistance : P Channel RDS (ON)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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