竊?SHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications ? Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) ? High-speed switching. ? Small gate charge.: QSW ＝ 11 nC(Typ.) ? Low drain-source ON-resistance: RDS (ON) = 4.3

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TOSHIBA

東芝

N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：993.39 Kbytes 頁數(shù)：9 Pages

VBSEMI

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ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

Toshiba

東芝

High Efficiency DC-DC Converter Applications Notebook PC Applications

High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications ? Built-in a schottky barrier diode Low forward voltage: VDSF = ?0.6 V (max) ? High-speed switching ? Small gate charge: QSW = 8.6 nC (typ.) ? Low drain-source ON-resistance: RDS (ON) =

文件：208.92 Kbytes 頁數(shù)：8 Pages

TOSHIBA

東芝

N-Channel 30 V (D-S) MOSFET

文件：1.11174 Mbytes 頁數(shù)：7 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

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