Field Effect Transistor Silicon P Channel MOS Type (U-MOS V)

Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications ? Small footprint due to small and thin package ? Low drain-source ON-resistance: RDS (ON)= 8.0 mΩ(typ.) ? High forward transfer admittance: |Yfs| = 23 S (typ.) ? Low leakage current: IDSS= ?10 μA (

文件：188.99 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Load Switch ? Notebook Adaptor Switch

文件：991.33 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Power MOSFET (P-ch single)

Application Scope：Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -11 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V ;

Toshiba

東芝