Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications ? Small footprint due to small and thin package ? Low drain-source ON-resistance : RDS (ON)= 3.0 mΩ(typ.) ? High forward transfer admittance : |Yfs| = 54 S (typ.) ? Low leakage current: IDSS= ?10 μA (max) (VDS= ?30 V) ? Enhance

文件：214.77 Kbytes 頁(yè)數(shù)：7 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁(yè)數(shù)：73 Pages

TOSHIBA

東芝

Power MOSFET (P-ch single)

Application Scope：Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 馬來(lái)西亞 Drain current ID -18 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V ;

Toshiba

東芝

POWER ZENERS

DESCRIPTION One watt zener diodes, hermetically sealed in glass. FEATURES ? High Surge Ratings ? A Quarter the Size of Conventional 1Watt Zeners ? Impervious to Moisture

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MICROSEMI

美高森美

POWER ZENERS

UZ8706, UZ8806 SERIES Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件：207.7 Kbytes 頁(yè)數(shù)：2 Pages

DIGITRON

POWER ZENERS

DESCRIPTION One watt zener diodes, hermetically sealed in glass. FEATURES ? High Surge Ratings ? A Quarter the Size of Conventional 1Watt Zeners ? Impervious to Moisture

文件：101.87 Kbytes 頁(yè)數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司