FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOSIV)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications ? Small footprint due to small and thin package ? Low drain-source ON resistance: RDS (ON) = 6.5 m? (typ.) ? High forward transfer admittance: |Yfs| = 40 S (typ.) ? Low leakage current: IDSS = ?10 μA (m

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

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Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：276.88 Kbytes 頁數(shù)：7 Pages

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Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current ID -10 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -20 V ;

Toshiba

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Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：276.88 Kbytes 頁數(shù)：7 Pages

TOSHIBA

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