Power MOSFET (N-ch single VDSS 30V)

Application Scope：Lithium-Ion secondary batteries / Power management switches\nPolarity：N-ch\nGeneration：U-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current ID 17 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

東芝

MOSFETs Silicon N-Channel MOS (U-MOS)

文件：229.5 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

MOSFETs Silicon N-Channel MOS (U-MOS)

文件：235.73 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

Magnet Wire, #16 Sol BC, Polyester/Amide-imide Polymer Ins

Product Description Magnet Wire, 16AWG (Solid) Bare Copper, Polyester/Amide-imide Polymer Insulation, CLASS 200 MW 35-C

文件：231.98 Kbytes 頁數(shù)：2 Pages

BELDEN

百通

500 MHz, G = -1 and 2 Triple Video Buffers with Disable

PRODUCT DESCRIPTION The AD8074/AD8075 are high-speed triple video buffers with G = +1 and +2 respectively. They have a –3 dB full signal bandwidth in excess of 450 MHz, along with slew rates in excess of 1400 V/μs. With better than –80 dB of all hostile crosstalk and 90 dB isolation, they are use

文件：306.17 Kbytes 頁數(shù)：16 Pages

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亞德諾

500 MHz, G = 1 and 2 Triple Video Buffers with Disable

PRODUCT DESCRIPTION The AD8074/AD8075 are high-speed triple video buffers with G = +1 and +2 respectively. They have a –3 dB full signal bandwidth in excess of 450 MHz, along with slew rates in excess of 1400 V/μs. With better than –80 dB of all hostile crosstalk and 90 dB isolation, they are use

文件：755.39 Kbytes 頁數(shù)：15 Pages

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亞德諾