650V Cascode GaN FET in TO-247

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TRANSPHORM

AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab)

文件：1.77892 Mbytes 頁(yè)數(shù)：12 Pages

TRANSPHORM

采用 TO-247 封裝的 650V 35mΩ 氮化鎵GaN FET

The TP65H035WS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r\n\r\n Transphorm GaN offers improved efficiency over silicon, through lower ? 易于驅(qū)動(dòng) – 與標(biāo)準(zhǔn)柵極驅(qū)動(dòng)器兼容\n? 低傳導(dǎo)、低開關(guān)損耗\n? 低 Qrr (170nC) – 無(wú)需任何續(xù)流二極管\n? GSD 引腳布局可提升高速設(shè)計(jì)\n? 通過(guò) JEDEC 認(rèn)證的 氮化鎵GaN技術(shù)\n? 符合限制有害物質(zhì)指令 (RoHS) 規(guī)范要求且不含鹵素\n? 實(shí)現(xiàn)更高效的拓?fù)?– 易于實(shí)施無(wú)橋圖騰柱設(shè)計(jì)\n? 快速切換，提高效率\n? 提高功率密度\n? 系統(tǒng)尺寸減小、重量減輕\n? BOM 成本更低;

Transphorm

650V 35mΩ AEC-Q101 Qualified GaN FET in?TO-247

The?TP65H035WSQA?650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\n\nThe device is also?automotive qual

Transphorm