P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

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P-Channel Enhancement Mode Vertical DMOS FETs

文件：639.78 Kbytes 頁數(shù)：5 Pages

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MOSFET, P-Channel Enhancement-Mode, -350V, 25 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (-2.4V max.) \nHigh input impedance \nLow input capacitance (60pF typical) \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage;

Microchip

微芯科技

包裝：袋 類別：靜電控制，防靜電，ESD，無塵室產(chǎn)品 靜電控制器件容器，防靜電儀器盒子 描述：TACKI PAK 3 1/2 X 2 9/16 X 1/2\

CORSTAT

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：481.01 Kbytes 頁數(shù)：4 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

文件：639.78 Kbytes 頁數(shù)：5 Pages

SUTEX