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首頁(yè) >TN2>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
TN2106K1	文件：32.189 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped 文件：32.189 Kbytes 頁(yè)數(shù)：4 Pages	SUTEX	SUTEX
TN2106N3	文件：32.189 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped 文件：32.189 Kbytes 頁(yè)數(shù)：4 Pages	SUTEX	SUTEX
TN2106ND	文件：32.189 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped 文件：32.189 Kbytes 頁(yè)數(shù)：4 Pages	SUTEX	SUTEX
TN2124	文件：32.82 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan 文件：32.82 Kbytes 頁(yè)數(shù)：4 Pages	SUTEX	SUTEX
TN2124K1	文件：32.82 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan 文件：32.82 Kbytes 頁(yè)數(shù)：4 Pages	SUTEX	SUTEX
TN2124N8	文件：32.82 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan 文件：32.82 Kbytes 頁(yè)數(shù)：4 Pages	SUTEX	SUTEX
TN2-12V	文件：78.8 Kbytes Page：4 Pages	SLIM POLARIZED RELAY FEATURES ? Small size for minimal PC board mounting requirements ? Small header area makes higher den sity mounting possible ? High sensitivity: 140 mW nominal operating power (single side stable 3-12 V type) ? Surge voltage withstand: 1500 V FCC Part 68 ? Sealed construction allows 文件：78.8 Kbytes 頁(yè)數(shù)：4 Pages	NAIS 松下電器	NAIS
TN2130	文件：454.42 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan 文件：454.42 Kbytes 頁(yè)數(shù)：4 Pages	SUTEX	SUTEX
TN2130	文件：848.2 Kbytes Page：14 Pages	N-Channel Enhancement-Mode Vertical DMOS FET General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe 文件：848.2 Kbytes 頁(yè)數(shù)：14 Pages	MICROCHIP 微芯科技	MICROCHIP
TN2130	文件：487.59 Kbytes Page：5 Pages	N-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i 文件：487.59 Kbytes 頁(yè)數(shù)：5 Pages	SUTEX	SUTEX

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技術(shù)參數(shù)

BVdss min (V)：
300
Rds (on) max (Ohms)：
25
CISSmax (pF)：
50
Vgs(th) max (V)：
2.4
Packages：
3\\SOT-23

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	TN2130		24+		20		詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	TN2130K1-G	SUPERTEX	24+	SOT-23-3	1450	只做原裝正品	詢價(jià)
深圳市振宏微科技有限公司	TN2130K1	SMD	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
深圳市艾宇欣科技有限公司	TN2130K1-G	Microchip	1940+	N/A	808	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢價(jià)
艾睿（深圳）半導(dǎo)體有限公司	TN2130K1-G	MICROCHIP(美國(guó)微芯)	2447	SOT-23-3	31500	3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,	詢價(jià)
深圳市科雨電子有限公司	TN2130K1-G	MICROCHIP	25+	SOT23-3	3675	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
訊運(yùn)(深圳/上海)電子有限公司	TN2130K1-G	MICROCHIP(美國(guó)微芯)	2021+	SOT-23-3	499		詢價(jià)
深圳市宇創(chuàng)芯科技有限公司	TN2130K1	SUPERTEX	24+	SOT-23	9600	原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!	詢價(jià)
深圳市安富世紀(jì)電子有限公司	TN2130K1	SUPERTEX	23+	SOT-23	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	TN2130K1-G貼片三極管	SK/VISH	23+	SOT-23	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)

更多TN2供應(yīng)商更新時(shí)間2026-1-21 16:01:00

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