High temperature 20 A SCRs

Features ? High junction temperature: Tj = 150 °C ? High noise immunity dV/dt = 400 V/μs up to 150 °C ? Gate triggering current IGT = 10 mA ? Peak off-state voltage VDRM/VRRM = 600 V ? High turn-on current rise dI/dt = 100 A/μs ? ECOPACK?2 compliant component ? TO-220FPAB insulated package:

文件：344.62 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

High temperature 20 A SCRs

Features ? High junction temperature: Tj = 150 °C ? High noise immunity dV/dt = 400 V/μs up to 150 °C ? Gate triggering current IGT = 10 mA ? Peak off-state voltage VDRM/VRRM = 600 V ? High turn on current rise dI/dt = 100 A/μs ? ECOPACK?2 compliant component Description This device offe

文件：414.48 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

High temperature 20 A SCRs

Features ? High junction temperature: Tj = 150 °C ? High noise immunity dV/dt = 400 V/μs up to 150 °C ? Gate triggering current IGT = 10 mA ? Peak off-state voltage VDRM/VRRM = 600 V ? High turn on current rise dI/dt = 100 A/μs ? ECOPACK?2 compliant component Description This device offe

文件：414.48 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

20 A 600 V high temperature SCR thyristors in insulated TO-220

Features ? High junction temperature: Tj max. = 150 °C ? High static immunity dV/dt = 400 V/μs up to 150 °C ? Peak off-state voltage VDRM/VRRM = 600 V ? High turn-on current rise dI/dt = 100 A/μs ? Insulated package TO-220AB: – Insulated voltage: 2500 VRMS – Complies with UL 1557 (File ref

文件：230.04 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

High temperature 20 A SCRs

Features ? High junction temperature: Tj = 150 °C ? High noise immunity dV/dt = 400 V/μs up to 150 °C ? Gate triggering current IGT = 10 mA ? Peak off-state voltage VDRM/VRRM = 600 V ? High turn on current rise dI/dt = 100 A/μs ? ECOPACK?2 compliant component Description Packaged in a no

文件：425.12 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

20 A 600 V high temperature SCR thyristors in insulated TO-220

Features ? High junction temperature: Tj max. = 150 °C ? High static immunity dV/dt = 750 V/μs up to 150 °C ? Peak off-state voltage VDRM/VRRM = 600 V ? High turn-on current rise dI/dt = 100 A/μs ? Insulated package TO-220AB: – Insulated voltage: 2500 VRMS – Complies with UL 1557 (File ref

文件：230.03 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

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N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件：57.16 Kbytes 頁數(shù)：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件：57.16 Kbytes 頁數(shù)：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件：57.16 Kbytes 頁數(shù)：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件：32.189 Kbytes 頁數(shù)：4 Pages

SUTEX