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    首頁(yè) >TN2>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    TN2640N3-G

    N-Channel Enhancement-Mode Vertical DMOS FET

    Features ? 2V Maximum Low Threshold ? High Input Impedance ? Low Input Capacitance ? Fast Switching Speeds ? Low On-Resistance ? Free from Secondary Breakdown ? Low Input and Output Leakage Applications ? Logic-Level Interfaces (Ideal for TTL and CMOS) ? Solid-State Relays ? Battery-Ope

    文件:1.18873 Mbytes 頁(yè)數(shù):20 Pages

    MICROCHIP

    微芯科技

    TN2640N3-G

    N-Channel Enhancement-Mode Vertical DMOS FETs

    General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

    文件:738.92 Kbytes 頁(yè)數(shù):8 Pages

    SUTEX

    TN2640ND

    N-Channel Enhancement-Mode Vertical DMOS FETs

    Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

    文件:461.12 Kbytes 頁(yè)數(shù):4 Pages

    SUTEX

    TN2640ND

    N-Channel Enhancement-Mode Vertical DMOS FETs

    General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

    文件:738.92 Kbytes 頁(yè)數(shù):8 Pages

    SUTEX

    TN2-6V

    SLIM POLARIZED RELAY

    FEATURES ? Small size for minimal PC board mounting requirements ? Small header area makes higher den sity mounting possible ? High sensitivity: 140 mW nominal operating power (single side stable 3-12 V type) ? Surge voltage withstand: 1500 V FCC Part 68 ? Sealed construction allows

    文件:78.8 Kbytes 頁(yè)數(shù):4 Pages

    NAIS

    松下電器

    TN28F001BX-B150

    1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

    Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternativ

    文件:436.24 Kbytes 頁(yè)數(shù):33 Pages

    INTEL

    英特爾

    TN28F001BX-B90

    1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

    Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternativ

    文件:436.24 Kbytes 頁(yè)數(shù):33 Pages

    INTEL

    英特爾

    TN28F001BX-T150

    1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

    Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternativ

    文件:436.24 Kbytes 頁(yè)數(shù):33 Pages

    INTEL

    英特爾

    TN28F001BX-T90

    1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

    Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternativ

    文件:436.24 Kbytes 頁(yè)數(shù):33 Pages

    INTEL

    英特爾

    TN28F020-120

    28F020 2048K (256K X 8) CMOS FLASH MEMORY

    Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

    文件:878.8 Kbytes 頁(yè)數(shù):38 Pages

    INTEL

    英特爾

    技術(shù)參數(shù)

    • BVdss min (V):

      300

    • Rds (on) max (Ohms):

      25

    • CISSmax (pF):

      50

    • Vgs(th) max (V):

      2.4

    • Packages:

      3\\SOT-23

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    24+
    20
    詢(xún)價(jià)
    SUPERTEX
    24+
    SOT-23-3
    1450
    只做原裝正品
    詢(xún)價(jià)
    SMD
    23+
    NA
    15659
    振宏微專(zhuān)業(yè)只做正品,假一罰百!
    詢(xún)價(jià)
    Microchip
    1940+
    N/A
    808
    加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
    詢(xún)價(jià)
    MICROCHIP(美國(guó)微芯)
    2447
    SOT-23-3
    31500
    3000個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
    詢(xún)價(jià)
    MICROCHIP
    25+
    SOT23-3
    3675
    就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
    詢(xún)價(jià)
    MICROCHIP(美國(guó)微芯)
    2021+
    SOT-23-3
    499
    詢(xún)價(jià)
    SUPERTEX
    24+
    SOT-23
    9600
    原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
    詢(xún)價(jià)
    SUPERTEX
    23+
    SOT-23
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢(xún)價(jià)
    SK/VISH
    23+
    SOT-23
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢(xún)價(jià)
    更多TN2供應(yīng)商 更新時(shí)間2026-1-22 10:21:00

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