NEGATIVE SLOPE TEMPERATURE SENSOR IC

DESCRIPTION The TK11070 is a temperature sensor IC with a linear negative slope output of -8 mV/°C over the range of -30 to + 105 °C. Its wide operating voltage range of 2.7 to 10.0 V makes it suitable for a number of applications requiring accurate temperature control, such as electronic thermos

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TOKO

NEGATIVE SLOPE TEMPERATURE SENSOR IC

DESCRIPTION The TK11070 is a temperature sensor IC with a linear negative slope output of -8 mV/°C over the range of -30 to + 105 °C. Its wide operating voltage range of 2.7 to 10.0 V makes it suitable for a number of applications requiring accurate temperature control, such as electronic thermos

文件：40.34 Kbytes 頁(yè)數(shù)：6 Pages

TOKO

絲印：K110A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.1 mΩ (typ.) (VGS = 10 V

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東芝

絲印：K110A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

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東芝

絲印：K110E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.0 mΩ (typ.) (VGS = 10 V

文件：575.49 Kbytes 頁(yè)數(shù)：9 Pages

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東芝

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.0 mΩ (typ.) (VGS = 10 V

文件：575.49 Kbytes 頁(yè)數(shù)：9 Pages

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東芝

絲印：K110E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：471.6 Kbytes 頁(yè)數(shù)：10 Pages

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東芝

絲印：K110N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

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東芝

絲?。?a target="_blank" title="Marking" href="/tk110p10pl/marking.html">TK110P10PL；Package：DPAK；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.9 mΩ (typ.) (VGS = 10 V

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東芝

絲?。?a target="_blank" title="Marking" href="/k110z65z/marking.html">K110Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：484.07 Kbytes 頁(yè)數(shù)：10 Pages

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東芝