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          首頁(yè) >TE2>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          TE28F320C3TA70

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁(yè)數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3TC70

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁(yè)數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3TC90

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁(yè)數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3TD70

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁(yè)數(shù):68 Pages

          INTEL

          英特爾

          TE28F320J3D-75

          Numonyx??Embedded Flash Memory (J3 v. D)

          Introduction This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

          文件:911.56 Kbytes 頁(yè)數(shù):68 Pages

          NUMONYX

          TE28F320S3-100

          WORD-WIDE FlashFile MEMORY FAMILY

          INTRODUCTION This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended

          文件:1.2625 Mbytes 頁(yè)數(shù):52 Pages

          INTEL

          英特爾

          TE28F320S3-120

          WORD-WIDE FlashFile MEMORY FAMILY

          INTRODUCTION This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended

          文件:1.2625 Mbytes 頁(yè)數(shù):52 Pages

          INTEL

          英特爾

          TE28F400B3

          SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

          INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

          文件:304.24 Kbytes 頁(yè)數(shù):48 Pages

          INTEL

          英特爾

          TE28F400B3

          SMART 3 ADVANCED BOOT BLOCK WORD-WIDE

          INTRODUCTION This preliminary datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP operating range of 2.7V–3.6V for read and program

          文件:427.94 Kbytes 頁(yè)數(shù):49 Pages

          INTEL

          英特爾

          TE28F400B3B110

          SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

          INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

          文件:304.24 Kbytes 頁(yè)數(shù):48 Pages

          INTEL

          英特爾

          技術(shù)參數(shù)

          • 元件類型:

            線繞

          • 電阻器數(shù)量:

            1

          • 底盤貼裝電阻器容差:

            5%

          • 電阻等級(jí):

            最多 1 kΩ

          • 額定電壓:

            2500 V

          • 端接數(shù)量:

            2

          • 底盤貼裝電阻器端接類型:

            焊片

          • 底盤貼裝電阻器安裝方式:

            支架

          • 底盤貼裝電阻器包裝方式:

            零散零件 - 盒裝

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          INTERSIL
          22+
          100000
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          普通
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          MICRON
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          更多TE2供應(yīng)商 更新時(shí)間2026-1-21 8:02:00
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