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          首頁 >TE2>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TE28F320C3BA100

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3BA110

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3BA70

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3BC70

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3BC90

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3BD70

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3T110

          3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:384.02 Kbytes 頁數(shù):59 Pages

          INTEL

          英特爾

          TE28F320C3T90

          3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:384.02 Kbytes 頁數(shù):59 Pages

          INTEL

          英特爾

          TE28F320C3TA100

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F320C3TA110

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          技術(shù)參數(shù)

          • 元件類型:

            線繞

          • 電阻器數(shù)量:

            1

          • 底盤貼裝電阻器容差:

            5%

          • 電阻等級:

            最多 1 kΩ

          • 額定電壓:

            2500 V

          • 端接數(shù)量:

            2

          • 底盤貼裝電阻器端接類型:

            焊片

          • 底盤貼裝電阻器安裝方式:

            支架

          • 底盤貼裝電阻器包裝方式:

            零散零件 - 盒裝

          供應(yīng)商型號品牌批號封裝庫存備注價格
          INTEL
          24+
          TSOP
          6232
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          INTEL
          BGA
          104
          正品原裝--自家現(xiàn)貨-實單可談
          詢價
          INTEL
          23+
          TSOP
          5000
          原裝正品,假一罰十
          詢價
          25+
          50
          普通
          詢價
          INTEL
          24+
          TSSOP
          2479
          本站現(xiàn)貨庫存
          詢價
          INTEL
          25+
          TSSOP
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          INTEL
          2022+
          7600
          原廠原裝,假一罰十
          詢價
          INT
          05+
          原廠原裝
          4515
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          INTEL
          17+
          TSSOP
          9988
          只做原裝進(jìn)口,自己庫存
          詢價
          ST
          24+
          模塊
          6430
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價
          更多TE2供應(yīng)商 更新時間2026-1-21 10:43:00
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