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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          TE28F032B3T90
          SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
          
INTRODUCTION
This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e
          文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages
          INTEL
          英特爾
          

          TE28F032B3TA110
          SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
          
INTRODUCTION
This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e
          文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages
          INTEL
          英特爾
          

          TE28F032B3TA90
          SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
          
INTRODUCTION
This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e
          文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages
          INTEL
          英特爾
          

          TE28F128J3D-75
          Numonyx??Embedded Flash Memory (J3 v. D)
          
Introduction
This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 v D) device features, operation, and specifications.
Product Features
■ Architecture
    — Symmetrical 128-Kbyte blocks
    — 256 Mbit (256 blocks)
    — 128 Mbit (128 blocks)
    — 64 Mbit 
          文件：911.56 Kbytes 頁(yè)數(shù)：68 Pages
          NUMONYX
          

          TE28F128P30B85
          Intel StrataFlash Embedded Memory
          
Introduction
This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications.
Product Features
■ High performance
    — 85/88 ns initial access
    — 40 MHz with zero wait states, 20 ns clock-to data output
          文件：1.60991 Mbytes 頁(yè)數(shù)：102 Pages
          INTEL
          英特爾
          

          TE28F128P30T85
          Intel StrataFlash Embedded Memory
          
Introduction
This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications.
Product Features
■ High performance
    — 85/88 ns initial access
    — 40 MHz with zero wait states, 20 ns clock-to data output
          文件：1.60991 Mbytes 頁(yè)數(shù)：102 Pages
          INTEL
          英特爾
          

          TE28F128P30XXX
          Intel StrataFlash Embedded Memory
          
Introduction
This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications.
Product Features
■ High performance
    — 85/88 ns initial access
    — 40 MHz with zero wait states, 20 ns clock-to data output
          文件：1.60991 Mbytes 頁(yè)數(shù)：102 Pages
          INTEL
          英特爾
          

          TE28F160B3
          SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
          
INTRODUCTION
This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e
          文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages
          INTEL
          英特爾
          

          TE28F160B3B110
          SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
          
INTRODUCTION
This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e
          文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages
          INTEL
          英特爾
          

          TE28F160B3B120
          SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
          
INTRODUCTION
This preliminary datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP operating range of 2.7V–3.6V for read and program
          文件：427.94 Kbytes 頁(yè)數(shù)：49 Pages
          INTEL
          英特爾
          

          
            
          
		
        
          
            
          
                
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            線繞
          • 電阻器數(shù)量：
            1
          • 底盤(pán)貼裝電阻器容差：
            5%
          • 電阻等級(jí)：
            最多 1 kΩ
          • 額定電壓：
            2500 V
          • 端接數(shù)量：
            2
          • 底盤(pán)貼裝電阻器端接類(lèi)型：
            焊片
          • 底盤(pán)貼裝電阻器安裝方式：
            支架
          • 底盤(pán)貼裝電阻器包裝方式：
            零散零件 - 盒裝
          
            
          
        
          
            
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          17700
          		

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          INTEL
          		

          2308+
          		

          TSOP56
          		

          4852
          		

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          Nexperia
          		

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          TFSOP-56-18.4mm
          		

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