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首頁(yè) >TE2>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
TE28F016S5-110	文件：611.49 Kbytes Page：37 Pages	BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT SMART 5 FlashFile? MEMORY FAMILY 4, 8, AND 16 MBIT Intel’s byte-wide Smart 5 FlashFile? memory family renders a variety of density offerings in the same package. The 4-, 8-, and 16-Mbit byte-wide FlashFile memories provide high-density, low-cost, nonvolatile, read/write storage solutions for a wi 文件：611.49 Kbytes 頁(yè)數(shù)：37 Pages	INTEL 英特爾	INTEL
TE28F016SC-110	文件：725.43 Kbytes Page：42 Pages	BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION This datasheet contains 4-, 8-, and 16-Mbit SmartVoltage FlashFile memory specifications. Section 1.0 provides a flash memory overview. Sections 2.0, through 5.0 describe the memory organization and functionality. Section 6.0 covers electrical specifications for commercial and extend 文件：725.43 Kbytes 頁(yè)數(shù)：42 Pages	INTEL 英特爾	INTEL
TE28F020-120	文件：878.8 Kbytes Page：38 Pages	28F020 2048K (256K X 8) CMOS FLASH MEMORY Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer 文件：878.8 Kbytes 頁(yè)數(shù)：38 Pages	INTEL 英特爾	INTEL
TE28F020-150	文件：878.8 Kbytes Page：38 Pages	28F020 2048K (256K X 8) CMOS FLASH MEMORY Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer 文件：878.8 Kbytes 頁(yè)數(shù)：38 Pages	INTEL 英特爾	INTEL
TE28F020-90	文件：878.8 Kbytes Page：38 Pages	28F020 2048K (256K X 8) CMOS FLASH MEMORY Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer 文件：878.8 Kbytes 頁(yè)數(shù)：38 Pages	INTEL 英特爾	INTEL
TE28F032B3B110	文件：304.24 Kbytes Page：48 Pages	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e 文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages	INTEL 英特爾	INTEL
TE28F032B3B90	文件：304.24 Kbytes Page：48 Pages	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e 文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages	INTEL 英特爾	INTEL
TE28F032B3BA110	文件：304.24 Kbytes Page：48 Pages	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e 文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages	INTEL 英特爾	INTEL
TE28F032B3BA90	文件：304.24 Kbytes Page：48 Pages	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e 文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages	INTEL 英特爾	INTEL
TE28F032B3T110	文件：304.24 Kbytes Page：48 Pages	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e 文件：304.24 Kbytes 頁(yè)數(shù)：48 Pages	INTEL 英特爾	INTEL

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技術(shù)參數(shù)

元件類型：
線繞
電阻器數(shù)量：
1
底盤(pán)貼裝電阻器容差：
5%
電阻等級(jí)：
最多 1 kΩ
額定電壓：
2500 V
端接數(shù)量：
2
底盤(pán)貼裝電阻器端接類型：
焊片
底盤(pán)貼裝電阻器安裝方式：
支架
底盤(pán)貼裝電阻器包裝方式：
零散零件 - 盒裝

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市毅創(chuàng)騰電子科技有限公司	TE28F320C3TD70	INTEL		BGA	104	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
深圳市豪邁興電子有限公司	TE28F128J3C150	INTEL	24+	TSOP	6232	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市益百分電子有限公司	TE28F320B3BD	INTEL	10+	TSOP	5000	原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	TE28F160B3BA110	INT	05+	原廠原裝	4515	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	TE28F800C3TA90	INTEL	24+	TSSOP	2479	本站現(xiàn)貨庫(kù)存	詢價(jià)
深圳市鑫煒納電子有限公司	TE28F256J3C125	INTEL	2022+		7600	原廠原裝,假一罰十	詢價(jià)
深圳市佳鑫美電子科技有限公司	TE28F160B3TA110	INTEL	25+	TSOP48	3629	原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電!	詢價(jià)
深圳市卓越微芯電子有限公司	TE28F800B3TA90	INTEL	25+	SSOP	551	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市澳億芯電子科技有限公司	TE28F160		25+		50	普通	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	TE28F160C3TD70	INTEL	25+	TSSOP	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)

更多TE2供應(yīng)商更新時(shí)間2026-1-21 10:20:00

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