Transient Voltage Suppressors for ESD Protection

Description The SXESDUC2FD3V3B protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electric

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SXSEMI

瞬芯半導(dǎo)體

Transient Voltage Suppressors for ESD Protection

Description The SXESDUC2FD3V3U protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electric

文件：784.11 Kbytes 頁數(shù)：5 Pages

SXSEMI

瞬芯半導(dǎo)體

1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features Ultra low leakage: nA level Operating voltage: 3.3 V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 4A (8/20 μs) RoHS Compliant

文件：337.81 Kbytes 頁數(shù)：4 Pages

LEIDITECH

雷卯電子

Transient Voltage Suppressors for ESD Protection

Description The SXESDLC2FD3V3BH protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electric

文件：647.82 Kbytes 頁數(shù)：5 Pages

SXSEMI

瞬芯半導(dǎo)體

Transient Voltage Suppressors for ESD Protection

Description The SXESDNC2FD3V3B protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical

文件：457.02 Kbytes 頁數(shù)：5 Pages

SXSEMI

瞬芯半導(dǎo)體