Transient Voltage Suppressors for ESD Protection

Description The SXESDUC3FD5VU protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical c

文件：657.84 Kbytes 頁數(shù)：5 Pages

SXSEMI

瞬芯半導體

Bi-directional TVS Diode

Features + Ultra small package: 1.0x0.6x0.5mm * Very low capacitance: 15pF typical ?Ultra low leakage: nA level + Low operating voltage: +5V + Low clamping voltage + 3-pin leadless package ?Upto 2-line protects + Complies with following standards: — IEC 61000-4-2 (ESD) immunity test. Air

文件：1.36465 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

2-Line Ultra Low Capacitance TVS Diode

Features Uitra smal package: 1.0x0.6x0.5mm Ultra low capacitance: 0.3pF typical (1/0-1/0) Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage 3-pin leadless package Up to 2-ine protects Complies with following standards: ~ IEC 610004-2 (ESD) immunity test Ar discha

文件：1.35518 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

SUBMINIATURE — SEALED

Features l Enclosed switch complying with IP 6K7 l Silicon-free version available l Models available for operating temperatures up to 120°C l Rated for currents up to 10 amp at 250VAC l Range of auxiliary actuators available (can also be retrofitted) l Various contact materials available,

文件：246.07 Kbytes 頁數(shù)：3 Pages

CHERRY

SUBMINIATURE — SEALED

Features l Enclosed switch complying with IP 6K7 l Silicon-free version available l Models available for operating temperatures up to 120°C l Rated for currents up to 10 amp at 250VAC l Range of auxiliary actuators available (can also be retrofitted) l Various contact materials available,

文件：246.07 Kbytes 頁數(shù)：3 Pages

CHERRY

Transient Voltage Suppressors for ESD Protection

Description The SXESDNC3FD5VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical c

文件：610.84 Kbytes 頁數(shù)：5 Pages

SXSEMI

瞬芯半導體