Transient Voltage Suppressors for ESD Protection

Description The SXESDNC2XD5VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large crosssectional area junctions for conducting high transient currents, offer desirable electrical c

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SXSEMI

瞬芯半導(dǎo)體

Transient Voltage Suppressors for ESD Protection

Description The SXESDUC2XD5VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical

文件：1.07392 Mbytes 頁(yè)數(shù)：6 Pages

SXSEMI

瞬芯半導(dǎo)體

Transient Voltage Suppressors for ESD Protection

Description The SXESDUC2XD5VU protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large crosssectional area junctions for conducting high transient currents, offer desirable electrical

文件：484.87 Kbytes 頁(yè)數(shù)：5 Pages

SXSEMI

瞬芯半導(dǎo)體

1-Line Ultra Low Capacitance Bi-directional TVS Diode

Features Ultra small package: 0.6x0.3x0.3mm Ultra low capacitance: 0.25pF typical Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±20kV Contact discharg

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LEIDITECH

雷卯電子

1- Line Bi-directional TVS Diode

Features Ultra low leakage: nA level Operating voltage: 5V Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±15kV Contact discharge: 8kV RoHS Compliant Low Clamping Voltage – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 5A (8/20μs) A

文件：1.20225 Mbytes 頁(yè)數(shù)：3 Pages

LEIDITECH

雷卯電子

Transient Voltage Suppressors for ESD Protection

Description The SXESDMC2XD5VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical

文件：575.22 Kbytes 頁(yè)數(shù)：5 Pages

SXSEMI

瞬芯半導(dǎo)體