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          首頁 >絲印反查>SVF4N90

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SVF4N90MJ

          絲?。?strong>SVF4N90;Package:TO-251J-3L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.66 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90MJ

          絲?。?strong>SVF4N90;Package:TO-251J-3L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.65 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90DTR

          絲?。?a target="_blank" title="Marking" href="/svf4n90d/marking.html">SVF4N90D;Package:TO-252-2L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.65 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90DTR

          絲印:SVF4N90D;Package:TO-252-2L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.66 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90F

          絲印:SVF4N90F;Package:TO-220F-3L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.65 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90F

          絲?。?a target="_blank" title="Marking" href="/svf4n90f/marking.html">SVF4N90F;Package:TO-220F-3L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.66 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90T

          絲?。?a target="_blank" title="Marking" href="/svf4n90t/marking.html">SVF4N90T;Package:TO-220-3L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.66 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90MJ

          絲?。?strong>SVF4N90;Package:TO-251J-3L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.65 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90MJ

          絲印:SVF4N90;Package:TO-251J-3L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.66 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          SVF4N90DTR

          絲印:SVF4N90D;Package:TO-252-2L;4A, 900V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

          文件:294.66 Kbytes 頁數(shù):10 Pages

          SILAN

          士蘭微

          供應(yīng)商型號品牌批號封裝庫存備注價格
          SILAN/士蘭微
          23+
          TO251
          11200
          原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          詢價
          SILAN/士蘭微
          25+
          TO-251J-3L
          188600
          全新原廠原裝正品現(xiàn)貨 歡迎咨詢
          詢價
          士蘭微
          24+
          10000
          原裝現(xiàn)貨
          詢價
          SILAN/士蘭微
          21+
          TO252
          9000
          詢價
          SILAN/士蘭微
          22+
          TO252
          100000
          代理渠道/只做原裝/可含稅
          詢價
          SILAN/士蘭微
          21+
          TO252
          880000
          明嘉萊只做原裝正品現(xiàn)貨
          詢價
          SILAN/士蘭微
          22+
          TO252
          20000
          只做原裝 品質(zhì)保障
          詢價
          FREESCA
          23+
          BGA
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          FREESCALE
          17+
          BGA364
          130
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          FAIRCHILD
          25+
          CAN8
          6089
          詢價
          更多SVF4N90供應(yīng)商 更新時間2026-1-21 15:09:00
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