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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SVF7N65RT

          絲印:SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:382.47 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲?。?strong>SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:382.46 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲印:SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:382.46 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲?。?strong>SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:382.47 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲?。?strong>SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:373.55 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲?。?strong>SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:373.56 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲印:SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:373.55 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲?。?strong>SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:382.47 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲?。?strong>SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:373.55 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          SVF7N65RT

          絲?。?strong>SVF7N65RT;Package:TO-220-3L;7A, 650V N-CHANNEL MOSFET

          GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

          文件:373.56 Kbytes 頁(yè)數(shù):10 Pages

          SILAN

          士蘭微

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          士蘭微
          24+
          10000
          原裝現(xiàn)貨
          詢價(jià)
          SILAN/士蘭微
          2022+
          TO-263
          50000
          原廠代理 終端免費(fèi)提供樣品
          詢價(jià)
          SILAN/士蘭微
          2022+
          TO-263
          30000
          進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝 假一罰十
          詢價(jià)
          SILAN/士蘭微
          23+
          TO-220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          SILAN/士蘭微
          24+
          TO-220
          60000
          全新原裝現(xiàn)貨
          詢價(jià)
          SILAN
          24+
          DIPSOP
          33520
          一級(jí)代理/放心購(gòu)買
          詢價(jià)
          SILAN
          25+
          SOP
          4100
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          SILAN/士蘭微
          24+
          TO-220F
          20000
          專營(yíng)SILAN士蘭微原裝保障
          詢價(jià)
          SILAN
          1716+
          TO-22OF
          7500
          只做原裝進(jìn)口,假一罰十
          詢價(jià)
          SILAN
          24+
          TO-220F-3L
          18800
          詢價(jià)
          更多SVF7N65RT供應(yīng)商 更新時(shí)間2026-1-18 14:26:00
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